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  n2206 / 81004tn (ot) no. 7558-1/6 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. LA6358AM overview the LA6358AM is a high-performance dual operational amplifier that can operate from a single voltage power supply (3 to 24 v) and over a wide operating te mperature range (-40 to 125c). it featur es a built-in phase correction circuit. it can also operate from a dual power supply with bot h positive and negative levels and features low power consumption. the LA6358AM can be used in a wide range of automotive and industrial applications as a transducer amplifier for all types of transducers, as a dc amplifier circuit, and for other purposes as well. functions ? phase correction not required ? wide operating supply voltage range 3.0 v to 24.0 v (single power supply systems) 1.5 v to 12.0 v (dual power supply systems) ? the input voltage range extends to essentially the gr ound level, and furthermore the output voltage range for v out is from 0 v to v cc ? 1.8 v. ? low current drain: i cc = 0.5 ma (typical) when v cc = + 5 v, r l = . specifications maximum ratings at ta = ? 40 c to + 125 c parameter symbol conditions ratings unit maximum supply voltage v cc max 32 v differential input voltage v id 32 v maximum input voltage v in max ? 0.3 to + 32 v allowable power dissipation pd max ta 25 c 300 mw operating temperature topr ? 40 to + 125 c storage temperature tstg ? 55 to + 150 c recommended operating conditions at ta = ? 40 c to + 125 c ratings parameter symbol conditions min typ max unit supply voltage v cc 3 24 v orderin g numbe r : enn7558 monolithic digital ic high-performance dual operational amplifier
LA6358AM no.7558-2/6 electrical characteristics (unless specified otherwis e, the conditions are ta = ? 40 c to + 125 c, v cc = 5 v) ratings parameter symbol conditions min typ max unit input offset voltage vio 2 7mv input offset current iio i in + /i in ? 5 50 na input bias current ib i in + /i in ? 45 250 na common-mode input voltage range vicm 0 v cc -1.8 v common-mode rejection ratio cmr v cc = 30 v 65 80 db large-amplitude voltage gain vg v cc = 15v, r l 2 k ? 25 100 v/mv output voltage range v out 0 v cc -1.8 v supply voltage rejection ratio svr 65 100 db channel separation ch sep f = 1 k to 20 khz 120 db current drain i cc 0.5 1.2 ma output current (source) i o source v in + = 1 v, v in ? = 0 v 10 20 ma output current (sink) i o sink v in + = 0 v, v in ? = 1 v 7 20 ma package dimensions unit: mm 3032c sanyo : mfp8 (225mil) --40 0 50 100 150 200 250 300 100 120 140 160 --20 0 20 40 60 80 60 ambient temperature, ta -- c allowable power dissipation, pd max -- mw ila01101 independent ic pin assignment 1 2 3 4 8 7 6 5 v out 1 v in -1 v in +1 gnd v in +2 v in -2 v out 2 v cc LA6358AM top view
LA6358AM no.7558-3/6 equivalent circuit test circuits 1. input offset voltage vio 9.9k ? vo1 9.9k ? 100 ? 100 ? v cc /v ee = 15v vio=vo1/100 v cc v ee 2. input offset current iio 9.9k ? vo4 9.9k ? 100k ? 100 ? 100 ? 100k ? 100 100k vo1 vo4 iio ? ? = v cc v ee 3. input bias current ib ( ? ) 9.9k ? vo2 9.9k ? 100k ? 100 ? 100 ? v cc v ee 100 100k vo1 vo2 ) ib( ? ? = ? 4. input bias current ib ( + ) 9.9k ? vo3 9.9k ? 100 ? 100 ? 100k ? 100 100k vo1 vo3 ) ib( ? ? = + v cc v ee
LA6358AM no.7558-4/6 5. common-mode rejection ratio cmr common-mode input voltage range vicn vo 9.9k ? 9.9k ? 100 ? 100 ? vi cmr vi= 7.5v v 100 15 20log cmr ? = v ee v cc 6. voltage gain vg r1 r2 vg = r2 r1 r1 v cc r2 v ee r l 7. channel separation ch sep v cc /2 v cc vo a b r l c v in r l v cc r1 r2 r1 v cc /2 b a b a v cc /2 v cc /2 r2 when the switch is in the "a" position r1vob r2voa 20log b) sep(a ch = when the switch is in the "b" position r1voa r2vob 20log a) sep(b ch = 8. current drain i cc v cc a 9. output current i o source v cc a vo +1v 10. output current i o sink v cc +1v a vo
LA6358AM no.7558-5/6 11. supply voltage rejection ratio svr ( + ) svr 9.9k ? . ? r2 100 ? 100 ? v cc =15v, 5v v ee = ? 5v, ? 15v v cc v ee r1 12. supply voltage rejection ratio svr ( ? ) 9.9k ? vo 9.9k ? r2 100 ? 100 ? v cc v ee r1 vo 100 cc v 20log ) svr( ? ? = + vo 100 ee v 20log ) svr( ? ? = ?         
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LA6358AM no.7558-6/6 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2004. specifications and inform ation herein are subject to change without notice. 
 
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